Remote Hasma Deposited Amorphous Silicon with In-Situ Hydrogen Etching

Abstract

We study the effects of using hydrogen plasma to reactively flush the reactor chamber in a remote plasma enhanced chemical vapor deposition system used for depositing thin film of a-Si:H. The thin film hydrogenated amorphous silicon with the hydrogen plasma flush process shows a little of effect in the dark current-voltage (I-V) measurements. And also, measurements show reduction of defects at the thin layer of the hydrogen-plasma flush.