Performance analysis of MOS-controlled bipolar power devices

Abstract

MOS-controlled bipolar power devices combine MOS and bipolar technology into a monolithic structure to tap the best features from both classes of devices. The bipolar part renders high conduction current capabilities at low forward voltage while the MOSFET component makes it possible to implement voltage control with minimum gate drive requirements. In this paper, three types of MOS-controlled bipolar devices, namely the insulated gate bipolar transistor (IGBT), the emitter switched thyristor (EST) and the n-channel MOS-controlled thyristor (NMCT), are analysed. Certain features unique to each device are highlighted. By keeping their internal parameters as similar as possible, a comparison of their performances is also made.<>