An addition to the influence of harmonic loads on MESFET amplifiers output power

1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363) Pub Date : 1900-01-01 DOI:10.1109/CRMICO.1999.815148

E.A. Svistov

引用次数: 0

Abstract

The aim of this paper is to present results of a 2 GHz amplifier's output power calculations, up to phase of load reflection coefficient at 4 GHz and 6 GHz frequency. The amplifier is based on two MESFET devices, each having a 3.6 mm gate width and 2 GHz operating frequency. Contours of maximum and minimum output power have been determined. This paper describes the method of design of the amplifier's output circuit with frequency crossing 2:1 (2-4 GHz), which gives a high output power at 4 GHz without additional power loss, which is linked to the load phase at the second harmonic.

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谐波负载对MESFET放大器输出功率的影响

本文的目的是给出一个2 GHz放大器的输出功率计算结果，直到4 GHz和6 GHz频率下负载反射系数的相位。放大器基于两个MESFET器件，每个器件具有3.6 mm栅极宽度和2 GHz工作频率。确定了最大和最小输出功率的轮廓。本文介绍了一种频率交叉2:1 (2-4 GHz)的放大器输出电路的设计方法，该电路在4 GHz时具有较高的输出功率，而不会产生与负载相位有关的二次谐波的额外功率损耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363)

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