A Process Variation Tolerant Low Contention Keeper Design for Wide Fan-In Dynamic OR Gate

V. Mahor, Akanksha Chouhan, M. Pattanaik
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引用次数: 1

Abstract

Register file structures in modern microprocessors usually employ wide fan-in dynamic CMOS OR gates. Weak keepers have been traditionally used to resolve the low noise margin problem of dynamic CMOS design. Scaling trends and process variation issues in CMOS design have reduced the effectiveness of this weak PMOS keeper. On the other hand large sized PMOS keeper used in wide fan-in dynamic OR gate results in contention between the pull down network (PDN) and the keeper. As a consequence of contention there is an unnecessary increase in power dissipation and loss in performance. In this paper a process variation tolerant wide fan-in dynamic OR gate with a new keeper design is proposed which is capable of reducing the contention between the keeper and PDN and hence capable of reducing the power dissipation and delay. Simulation results at 50 nm shows that the power dissipation and delay have been reduced by 40% and 35% respectively as compared to the wide fan-in dynamic OR gate with conventional keeper under different levels of process variation.
宽扇入动态或门容差低争用保持器设计
现代微处理器中的寄存器文件结构通常采用宽扇内动态CMOS或门。传统上采用弱保持器来解决动态CMOS设计中的低噪声裕度问题。CMOS设计中的缩放趋势和工艺变化问题降低了这种弱PMOS保持器的有效性。另一方面,在宽扇入动态或门中使用的大型PMOS守器会导致下拉网络(PDN)与守器之间的竞争。争用的结果是不必要地增加了功耗和性能损失。本文提出了一种新的看门人设计的容忍过程变化的宽扇入动态或门,它能够减少看门人与PDN之间的争用,从而能够降低功耗和延迟。50 nm的仿真结果表明,在不同的工艺变化水平下,与传统的宽扇入动态或门相比,功耗和延迟分别降低了40%和35%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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