Analysis of the Impact of Chip Failures in Different Positions of Press-Pack IGBTs on other Chips

Abstract

Crimped insulated gate bipolar transistors (IGBT) are widely used in electric locomotives, flexible DC power transmission systems and converters because of their characteristics of easy series and high-power density. The reliability of IGBT directly affects the safe operation of the system, and the failure of the internal chip often occurs. In order to explore the influence of the failure of the chip at different positions in IGBT on other chips, Firstly, this paper constructs the multi physical field finite element model of crimped IGBT module, and determine its boundary conditions. Secondly, simulate and analyze the influence of chip faults at different positions on the stress, temperature and current density distribution of other chips, The life prediction model is used to predict the life of IGBT. The results show that when the chip at the edge fails to conduct, it is easier to increase the stress and temperature of other chips and shorten the service life than the chip at the center. However, the peak of current density does not increase significantly. The results can provide scientific reference for reliability analysis of Press-pack IGBTs.