Comprehensive Zn doping investigation for GaInP/AlGaInP quantum well structures for high power visible lasers grown by MOCVD

Abstract

The authors found that the inactive Zn in GaInP/(Al/sub 0.7/Ga/sub 0.3/)InP quantum well structures peculiarly degraded the carrier life time which strongly affected the laser's performance and reliability. The novel cap layer of n-(Al/sub 0.7/Ga/sub 0.3/)InP realized almost 100% activation of Zn in the p-(Al/sub 0.7/Ga/sub 0.3/)InP layer. The same temperature dependence on the threshold current density of visible lasers was obtained by introducing the novel n-cap layer. The kink level of 160 mW and the maximum light output power of 204 mW at 25/spl deg/C were realized by introducing the novel cap layer of the n-(Al/sub 0.7/Ga/sub 0.3/)InP for the window structured visible laser. This visible laser could achieve the finest reliability under stable continuous wave operation over 2600 hrs under 50 mW at 50/spl deg/C.<>