Study of a Q-band Power Amplifier for Satellite Communication Systems

2021 International Siberian Conference on Control and Communications (SIBCON) Pub Date : 2021-05-13 DOI:10.1109/SIBCON50419.2021.9438894

D. Dmitriev, V. N. Ratushnyak, A. Gladyshev, V. N. Tyapkin

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引用次数: 2

Abstract

In the article the results of experimental studies of the power amplifier Q-band chip-based NC116150C-4345P10. This microcircuit is made on the basis of gallium nitride (GaN) technology and has high reliability, efficiency, and relatively low cost. In the production of power amplifiers GaN technology has been widely used due to the high breakdown voltage of a wide band gap [1]–[4]. The Q-band is still rather poorly mastered and the study of the characteristics of amplifiers at these frequencies is fraught with some difficulties. The paper presents a technique for measuring the characteristics of a power amplifier in the Q- band. The schemes for measuring the linear and amplitude characteristics of the amplifier, the results of experimental studies and signal spectra at the maximum output power of the amplifier are presented. An experimental study of the characteristics of the amplifier made it possible to determine the possibility of its application in satellite communication systems, when calculating the energy potential of the Earth-satellite radio link and the reliability of the satellite channel.

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卫星通信系统中q波段功率放大器的研究

本文对基于NC116150C-4345P10的功率放大器q波段芯片进行了实验研究。该微电路以氮化镓(GaN)技术为基础，具有高可靠性、高效率和相对较低的成本。在功率放大器的生产中，GaN技术由于具有宽带隙的高击穿电压而得到了广泛的应用[1]-[4]。对q波段的掌握仍然很差，对这些频率下放大器特性的研究充满了一些困难。提出了一种测量功率放大器Q波段特性的方法。给出了放大器线性特性和幅值特性的测量方案、实验研究结果和放大器最大输出功率时的信号谱。在计算地球-卫星无线电链路的能量潜力和卫星信道的可靠性时，对放大器特性的实验研究使确定其在卫星通信系统中应用的可能性成为可能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2021 International Siberian Conference on Control and Communications (SIBCON)

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