{"title":"The potential of electron-nuclear spin interactions for use in quantum information processing","authors":"G. W. Hitt, A. Isakovic","doi":"10.1109/IEEEGCC.2011.5752488","DOIUrl":null,"url":null,"abstract":"Recent experiments have demonstrated that an ensemble of spin polarized electrons can transfer its spin polarization to the spin of the host atomic nuclei in a “spin-friendly” semiconductor like gallium arsenide (GaAs). In this paper, we analyze this process in terms of its efficiency for using natural nuclear spin in a solid state quantum computer. Among the appealing features of the proposed design is the potential to mate it to existing memory technology. We propose a realizable and scalable model of such a device based on growth-implanted quantum dots in a III-V semiconductor matrix and analyze the feasibility of transferring spin polarized information to such a system, keeping it stored in the system and processing it.","PeriodicalId":119104,"journal":{"name":"2011 IEEE GCC Conference and Exhibition (GCC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE GCC Conference and Exhibition (GCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEEGCC.2011.5752488","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Recent experiments have demonstrated that an ensemble of spin polarized electrons can transfer its spin polarization to the spin of the host atomic nuclei in a “spin-friendly” semiconductor like gallium arsenide (GaAs). In this paper, we analyze this process in terms of its efficiency for using natural nuclear spin in a solid state quantum computer. Among the appealing features of the proposed design is the potential to mate it to existing memory technology. We propose a realizable and scalable model of such a device based on growth-implanted quantum dots in a III-V semiconductor matrix and analyze the feasibility of transferring spin polarized information to such a system, keeping it stored in the system and processing it.