A low-power wideband transimpedance amplifier in 0.13µm CMOS

2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals Pub Date : 2011-09-26 DOI:10.1109/IMWS2.2011.6027202

Jiyoung Tak, H. Kim, Jihye Shin, Jinju Lee, Jung-Won Han, Sung Min Park

引用次数: 2

Abstract

This paper presents a low-power wideband transimpedance amplifier (TIA) for the applications of multi-band wireless communication systems. Realized in a standard 0.13µm CMOS technology, the measured results of the TIA demonstrate the maximum gain of 16dB in the frequency range of 800MHz∼4.3GHz, the noise figure of < 5.88dB, the input-referred third order intercept point (IIP3) of −5.4dBm at 2.4GHz, and the power consumption of 12mW from a single 1.2V supply. The chip occupies the total area of 0.7×1.1mm2.

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一种0.13µm CMOS低功耗宽带跨阻放大器

提出了一种适用于多波段无线通信系统的低功耗宽带传输阻抗放大器。在标准的0.13µm CMOS技术上实现，TIA的测量结果表明，在800MHz ~ 4.3GHz频率范围内，最大增益为16dB，噪声系数为<5.88dB, 2.4GHz时输入参考三阶截距点(IIP3)为−5.4dBm，单路1.2V电源功耗为12mW。芯片的总面积为0.7×1.1mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals

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