Impact of process variability on FinFET 6T SRAM cells for physical unclonable functions (PUFs)

Abstract

The behavior of 6T SRAM cells in presence of process variability for physical unclonable functions (PUFs) is analyzed on the 16 nm FinFET technology. Both systematic and random threshold voltage variations are considered in this analysis. Randomness prosperity of the secret keys generated from the SRAM cell is tested. Supply voltage ramp-up impact on the cells start-up values is also analyzed at different mismatch amounts.