Nachiket V. Desai, H. Krishnamurthy, William J. Lambert, Jingshu Yu, H. Then, N. Butzen, Sheldon Weng, C. Schaef, N. Nidhi, M. Radosavljevic, J. Rode, J. Sandford, K. Radhakrishnan, K. Ravichandran, B. Sell, J. Tschanz, V. De
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引用次数: 2
Abstract
A 5V-input, high-frequency, high-density (9A/mm2) buck converter featuring a low-voltage GaN power transistor (with 5-10× better FoM than Si) with on-die gate clamps, integrated with a CMOS companion die in 4mm × 4mm package, achieves 94.2% peak efficiency for 5Vin/1Vout at 3MHz switching frequency with a 40nH inductor.
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