Reliability study of CMOS FinFETs

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269206

Yang-Kyu Choi, Daewon Ha, E. Snow, J. Bokor, T. King

引用次数: 65

Abstract

Hot-carrier and oxide reliability of CMOS FinFETs with 2.1 nm-thick gate-SiO/sub 2/ were investigated. It was found that hot-carrier immunity improves as the fin width (body thickness) decreases, which facilitates gate-length scaling, while it is degraded at elevated temperature due to the self-heating effect. High values of Q/sub BD/ are achieved for devices with very small gate area. A post-fin-etch hydrogen anneal is helpful for improving hot-carrier immunity and Q/sub BD/.

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CMOS finfet可靠性研究

研究了2.1 nm厚栅极sio / sub2 / CMOS finfet的热载流子和氧化物可靠性。研究发现，随着翅片宽度(体厚)的减小，热载流子抗扰度提高，有利于栅长结垢，而在温度升高时，由于自热效应，热载流子抗扰度降低。对于栅极面积非常小的器件，可以实现高Q/sub / BD/值。蚀鳍后氢退火有助于提高热载子抗扰度和Q/sub BD/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE International Electron Devices Meeting 2003

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