Alpha, Heavy Ion and Neutron Test Results On 90nm ST BCD-CMOS technology

A. Jain, A. Veggetti, D. Crippa, A. Benfante, S. Gerardin, M. Bagatin, C. Cazzaniga
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Abstract

This paper presents design, implementation, test methodology and results for radiation qualification on 90nm ST BCD CMOS technology platform. The radiation test is performed with alpha particles, heavy ions and neutron. The results obtained are analyzed and correlated with CAD data. Further the effectiveness of prominent radiation hardening techniques is also studied which can make the technology usable for very low error rate applications such as automotive, medical and space.
90nm ST BCD-CMOS工艺的α、重离子和中子测试结果
本文介绍了在90nm ST BCD CMOS技术平台上进行辐射鉴定的设计、实现、测试方法和结果。辐射试验用α粒子、重离子和中子进行。对所得结果进行了分析,并与CAD数据进行了对比。此外,还研究了突出的辐射硬化技术的有效性,这可以使该技术可用于非常低错误率的应用,如汽车、医疗和空间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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