{"title":"An efficient signature loading mechanism for memory repair","authors":"V. Sargsyan","doi":"10.1109/EWDTS.2014.7027061","DOIUrl":null,"url":null,"abstract":"Built-in Self-Test (BIST) and Built-In Self-Repair (BISR) have been widely used for embedded memories test and repair purposes. One of the disadvantages of these circuits is the memory repair signature delivery process at what is typically known as hard repair flow. In this paper, a memory repair signature loading mechanism is introduced, which significantly reduces memory repair organization time.","PeriodicalId":272780,"journal":{"name":"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)","volume":"2018 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2014.7027061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Built-in Self-Test (BIST) and Built-In Self-Repair (BISR) have been widely used for embedded memories test and repair purposes. One of the disadvantages of these circuits is the memory repair signature delivery process at what is typically known as hard repair flow. In this paper, a memory repair signature loading mechanism is introduced, which significantly reduces memory repair organization time.