New design of a three-terminal memristor emulator

Zhi Zhou, Dongsheng Yu, Xiaoping Ma, He Cheng, Ciyan Zheng
{"title":"New design of a three-terminal memristor emulator","authors":"Zhi Zhou, Dongsheng Yu, Xiaoping Ma, He Cheng, Ciyan Zheng","doi":"10.1109/ICIEA.2017.8282951","DOIUrl":null,"url":null,"abstract":"An emulator circuit is newly designed in this paper by making use of common off-the-shelf active devices for mimicking the dynamic behaviors of the three-terminal memristors (3T-MRs). The theoretical calculation shows that the equivalent memductance of the 3T-MRs emulator can be flexibly controlled by imposing excitation voltage with different amplitude, frequency and duty cycle on the third terminal. For the purpose of testing the controllability and emulation performance of the proposed emulator, simulation investigation is carried out based on PSpice software. The simulation results show good agreement with theoretical analysis, which confirms that the memductance of this 3T-MRs emulator can be conveniently controlled and can be utilized for further investigating the dynamic behaviors of 3T-MRs.","PeriodicalId":443463,"journal":{"name":"2017 12th IEEE Conference on Industrial Electronics and Applications (ICIEA)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th IEEE Conference on Industrial Electronics and Applications (ICIEA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIEA.2017.8282951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

An emulator circuit is newly designed in this paper by making use of common off-the-shelf active devices for mimicking the dynamic behaviors of the three-terminal memristors (3T-MRs). The theoretical calculation shows that the equivalent memductance of the 3T-MRs emulator can be flexibly controlled by imposing excitation voltage with different amplitude, frequency and duty cycle on the third terminal. For the purpose of testing the controllability and emulation performance of the proposed emulator, simulation investigation is carried out based on PSpice software. The simulation results show good agreement with theoretical analysis, which confirms that the memductance of this 3T-MRs emulator can be conveniently controlled and can be utilized for further investigating the dynamic behaviors of 3T-MRs.
三端忆阻器仿真器的新设计
本文利用现有的常用有源器件,设计了一种模拟三端忆阻器动态特性的仿真电路。理论计算表明,通过在第三端施加不同幅度、频率和占空比的激励电压,可以灵活地控制3T-MRs仿真器的等效电导率。为了测试所提出的仿真器的可控性和仿真性能,基于PSpice软件进行了仿真研究。仿真结果与理论分析吻合较好,验证了该仿真器的电导率可以方便地控制,可用于进一步研究3T-MRs的动态行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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