Memristor based Tunable Negative Group Delay Circuit

Abstract

The rise of new generation communication systems requires high-quality signal transmission with significantly less signal distortion. Hence to ensure the quality, a tri-band Negative Group Delay Circuit (NGDC) is designed utilizing bandstop characteristics to compensate for the undesired positive group delays. In this work, L and U shaped stubs are etched on the 50 Ohm transmission line to generate NGD. Further, a memristor is connected across a slot to bring about tunability to the group delays, wherein it acts as a tunable resistance.