Double-pulse characterization of GaN-on-Sapphire FETs for technology development

Abstract

A recently published double-pulse technique, useful for the isodynamic pulsed IV characterization of GaN FETs at a fixed charge trapping state, is here applied to the first prototypes of 0.5 µm GaN-on-Sapphire FETs manufactured by the Polish Institute of Electronics Materials Technology. The measurements presented in this work depict a practical method for characterizing trap-related lag effects in GaN FETs, and are intended both for modeling as well as for assisting further technology developments.