Low noise C-band amplifier

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487) Pub Date : 2001-09-10 DOI:10.1109/CRMICO.2001.961493

V. Alybin, S.Y. Zyablikov, A.A. Parusov, E. Y. Blinov

引用次数: 0

Abstract

The results of design of low noise amplifier for C-band satcom stations are presented. 40 K of noise temperature and more than 60 dB gain have been obtained in 500 MHz bandwidth with WSVR less than 1.2. The amplifier includes four stages: amplifier, DC linear controller of supply voltage, low noise regulated GaAs FET bias and matching circuits. Minimal number of construction units ensures high reliability and low cost of serial production.

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低噪声c波段放大器

介绍了c波段卫星通信站用低噪声放大器的设计结果。在500mhz带宽下，噪声温度达到40k，增益大于60db, WSVR小于1.2。该放大器包括四个阶段:放大器、直流线性电源电压控制器、低噪声稳压GaAs FET偏置和匹配电路。最少数量的施工单位，确保高可靠性和低成本的批量生产。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)

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