{"title":"The Influence of RF Plasma Processes on Nitride (BN, AlN, GaN) Layers","authors":"M. Galazka, J. Szmidt, A. Werbowy","doi":"10.1106/152451102024506","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Wide Bandgap Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1106/152451102024506","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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