Influence of mole fraction variation of binary metal gate on SON MOSFET device performance

Abstract

Work function engineering with continuous horizontal mole fraction variation in a binary metal alloy gate has been proposed already on silicon on nothing (SON) MOSFET. Presently, concept of work function engineering by mole fraction variation along both vertical as well as horizontal direction in a binary alloy gate is applied analytically in our model. Effects of this vertical mole fraction variation on various device parameters such as threshold voltage, drain current, transconductance, drain conductance and voltage gain are studied and compared with the model suggested by Manna et al. and an improvement of overall performance has been observed.