Hard and soft X-ray excited photoelectron spectroscopy study on high-κ gate insulators

Abstract

Hard and soft X-ray photoelectron spectroscopy study on the composition and the chemical structures of transition layers at La₂O₃/Si(100), Gd₂O₃/Si(100), Lu₂O₃/Si(100) and La₂O₃/Y₂O₃/Si(100) interfaces and their thermal stabilities are discussed. Soft X-ray photoelectron spectroscopy study on the distribution of nitrogen atomos in nearly 1-nm-thick oxynitride films and the chemical structures of the transition layer at SiO₂/Si(100) interface are also discussed.