BCB benchmarking for three-independent-gate field effect transistors

Abstract

In this book chapter, a detailed explanation is given for the introduction of TIGFET devices into the BCB methodology. The fundamental principles of TIGFET technology are presented. The intrinsic device model under consideration is described and the basic circuit-level opportunities are investigated. The equations for area, delay, energy, and power for the various circuits are listed and the results are outlined and thoroughly examined.