Effects of Tolerance Fabrication of Extended Interaction Oscillator Based on Pseudospark-sourced Sheet Electron Beam at 0.35 THz

Jie Xie, Y. Alfadhl, J. Zhang, A. Cross, H. Yin, L. Zhang, K. Ronald, A. Phelps, W. He, G. Shu, J. Zhao, X. Chen
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Abstract

A practical numerical approach to the analysis of the effects of tolerances fabrication on the performance of a planar 0.35 THz extended interaction oscillator (EIO) is presented. The planar EIO is to be driven by pseudospark-sourced sheet electron beam. The influence of tolerance on the $Q$-value, resonance frequency, characteristic impedance is demonstrated using an effective value of conductivity of 1.1 × 107 S/m to take into account the skin depth and surface roughness. The method of Wire Electrical Discharge Machining (WEDM) is proposed to manufacture the 0.35 THz EIO because of its precision and moderate cost compared with other manufacturing methods such as high speed micro machining, Deep Reactive Ion Etching (DRIE) or Ultra Violet Lithographie, Galvanik, and Abformung (UV LIGA).
0.35 THz伪火花源电子束扩展相互作用振荡器容差制造的影响
提出了一种实用的数值方法来分析公差制造对平面0.35太赫兹扩展相互作用振荡器(EIO)性能的影响。采用伪火花源片状电子束驱动平面电致发光器件。考虑到蒙皮深度和表面粗糙度,以电导率的有效值为1.1 × 107 S/m,证明了公差对Q值、共振频率和特性阻抗的影响。与高速微加工、深度反应离子蚀刻(DRIE)或紫外光刻、Galvanik和Abformung (UV LIGA)等其他制造方法相比,采用线切割加工(WEDM)方法制造0.35 THz的EIO具有精度高、成本低等优点。
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