Verification of an Equivalent Circuit Model for LDMOS-SCR Based on 0.5 µm CMOS Process

Abstract

Based on a LDMOS-SCR designed and manufactured in 0.5µm CMOS process, a SCR equivalent circuit model for ESD protection is applied and verified. Simulation results show a high consistency with the TLP 1-V curve. It contributes to the simulation methodology of SCR devices for ESD protection.