{"title":"C-Band 6 Bit Compact MMIC Phase Shifter with Reduced Loss","authors":"Manu Raj, S. Chaturvedi","doi":"10.1109/IMaRC.2018.8877265","DOIUrl":null,"url":null,"abstract":"A C-band highly compact 6 bit digital phase phase shifter (DPS) on GaAs Monolithic Microwave integrated Circuit (MMIC) is discussed in this paper. The circuit is realized using 0.7µm G7S technology at GAETEC foundry. Switching of the High pass/Low pass network is achieved by 0.7 µm MESFET device which offers reduced insertion loss if compensated with shunt resonating inductors. A measured insertion loss of 6.5 dB with ±0.4 dB loss variation is achieved within 18% bandwidth. The circuit being small in size (4.5mm x 2mm) and having phase shift errors within desirable limits is suitable for integration into a T/R core chip.","PeriodicalId":201571,"journal":{"name":"2018 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMaRC.2018.8877265","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A C-band highly compact 6 bit digital phase phase shifter (DPS) on GaAs Monolithic Microwave integrated Circuit (MMIC) is discussed in this paper. The circuit is realized using 0.7µm G7S technology at GAETEC foundry. Switching of the High pass/Low pass network is achieved by 0.7 µm MESFET device which offers reduced insertion loss if compensated with shunt resonating inductors. A measured insertion loss of 6.5 dB with ±0.4 dB loss variation is achieved within 18% bandwidth. The circuit being small in size (4.5mm x 2mm) and having phase shift errors within desirable limits is suitable for integration into a T/R core chip.
本文讨论了一种基于砷化镓单片微波集成电路的c波段高紧凑6位数字移相器(DPS)。该电路在GAETEC代工厂采用0.7µm G7S技术实现。高通/低通网络的开关由0.7 μ m MESFET器件实现,如果用分流谐振电感进行补偿,则可以降低插入损耗。在18%的带宽范围内,测量到的插入损耗为6.5 dB,损耗变化为±0.4 dB。电路尺寸小(4.5mm x 2mm),相移误差在理想范围内,适合集成到T/R核心芯片中。