A dual-band LO generation system using a 40GHz VCO with a phase noise of −106.8dBc/Hz at 1-MHz

Ying Chen, Y. Pei, D. Leenaerts
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引用次数: 17

Abstract

This paper demonstrates a dual-band LO generation system using a low phase noise single-band 40GHz VCO as the signal source. The LO generation system has two outputs: single-band LO1 at 20GHz and dual-band LO2 switchable between 10GHz and 15GHz. Implemented in 0.25-μm SiGe:C BiCMOS, the VCO achieves a phase noise of -106.8dBc/Hz at 1-MHz offset from 40GHz with a frequency tuning range of 9.7%.
采用40GHz压控振荡器的双频LO产生系统,在1mhz时相位噪声为−106.8dBc/Hz
本文介绍了一种采用低相位噪声单频段40GHz压控振荡器作为信号源的双频LO产生系统。LO产生系统有两个输出:20GHz的单频段LO1和10GHz和15GHz之间可切换的双频LO2。该VCO采用0.25-μm SiGe:C BiCMOS实现,在40GHz的1 mhz偏移时相位噪声为-106.8dBc/Hz,频率调谐范围为9.7%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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