K. Guilloy, N. Pauc, A. Gassenq, P. Gentile, S. Tardif, F. Rieutord, J. Escalante, I. Duchemin, Y. Niquet, V. Calvo, G. O. Dias, D. Rouchon, J. Widiez, J. Hartmann, D. Fowler, A. Chelnokov, V. Reboud, R. Geiger, T. Zabel, H. Sigg, J. Faist
{"title":"Photocurrent spectroscopy and X-ray microdiffraction study of highly strained germanium nanostructures","authors":"K. Guilloy, N. Pauc, A. Gassenq, P. Gentile, S. Tardif, F. Rieutord, J. Escalante, I. Duchemin, Y. Niquet, V. Calvo, G. O. Dias, D. Rouchon, J. Widiez, J. Hartmann, D. Fowler, A. Chelnokov, V. Reboud, R. Geiger, T. Zabel, H. Sigg, J. Faist","doi":"10.1109/GROUP4.2015.7305919","DOIUrl":null,"url":null,"abstract":"Germanium has been highly investigated as a potential light emitting material for the monolithic integration of photonic devices on silicon-based electronics. Indeed, despite the indirect nature of its bandgap, sufficient tensile strain could yield efficient light emission. We present here an experimental study of the influence of tensile strain on the direct bandgap of germanium nanostructures, using both bottom-up and top-down approaches [1].","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2015.7305919","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Germanium has been highly investigated as a potential light emitting material for the monolithic integration of photonic devices on silicon-based electronics. Indeed, despite the indirect nature of its bandgap, sufficient tensile strain could yield efficient light emission. We present here an experimental study of the influence of tensile strain on the direct bandgap of germanium nanostructures, using both bottom-up and top-down approaches [1].
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