DDSCR Device Structure Fabricated on 0.5 µm CMOS Process

Abstract

Dual Direction Silicon Controlled Rectifier(DDSCR) are primarily used for ESD protection in high voltage environments. According to the results of the device test, the trigger voltage and the sustain voltage of the DDSCR are 17.62V and 9.54V, respectively. Finally, by changing the important dimensions of the DDSCR, the ESD characteristics of the device can be significantly improved.