Dual loop hardened latch circuit for low power application

S. Sriram, Haiqing Nan, K. Choi
{"title":"Dual loop hardened latch circuit for low power application","authors":"S. Sriram, Haiqing Nan, K. Choi","doi":"10.1109/SOCDC.2010.5682958","DOIUrl":null,"url":null,"abstract":"As technology is scaling down, circuit reliability issues are major concerns because digital circuits are more susceptible to external noise sources. Soft Error is one such source which changes the voltage of internal nodes of the circuit. Hence it is necessary to design soft error (SE) immune digital circuits. In this paper, we proposed a novel SE immune latch circuit which operates at 0.5V using 32nm technology node. Compared to previous hardened latches up to date, the proposed latch circuit completely immunes to SE on any node of the circuit with 26% total delay reduction.","PeriodicalId":380183,"journal":{"name":"2010 International SoC Design Conference","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International SoC Design Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCDC.2010.5682958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

As technology is scaling down, circuit reliability issues are major concerns because digital circuits are more susceptible to external noise sources. Soft Error is one such source which changes the voltage of internal nodes of the circuit. Hence it is necessary to design soft error (SE) immune digital circuits. In this paper, we proposed a novel SE immune latch circuit which operates at 0.5V using 32nm technology node. Compared to previous hardened latches up to date, the proposed latch circuit completely immunes to SE on any node of the circuit with 26% total delay reduction.
用于低功耗应用的双回路硬化锁存电路
随着技术规模的缩小,电路可靠性问题成为主要问题,因为数字电路更容易受到外部噪声源的影响。软误差就是这样一种源,它改变电路内部节点的电压。因此,有必要设计软误差免疫数字电路。在本文中,我们提出了一种新的SE免疫锁存电路,其工作电压为0.5V,采用32nm技术节点。与迄今为止的硬化锁存器相比,所提出的锁存器电路在电路的任何节点上完全不受SE的影响,总延迟减少26%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信