The Application of SiC Devices in Photovoltaic Grid-connected Inverters

Abstract

The continuous development of photovoltaic grid-connected technology extended the requirement on higher power density and higher efficiency for power converters. In this respect, the application of silicon carbide (SiC) high-power power electronic devices in photovoltaic inverter systems can simplify the system design, simplify the heat dissipation device, reduce energy loss, reduce the volume and weight of the system, and thus greatly reduce the cost. The boost module is a key component of the inverter. In this work, 1200V/20A SiC diodes and SiC MOSFETs are applied to the boost circuit of a single-phase photovoltaic grid-connected inverter, which increases the overall efficiency of the inverter by more than 0.5%.