An original passive device for on-wafer noise parameter measurement verification

Abstract

Using a thin film technology, we have designed and fabricated a new passive device for on-wafer noise parameter measurement verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low noise MESFET or HEMT transistors. This new device is ideal as a verification standard, and suited for on-wafer measurements due to its small size and wide operation bandwidth.<>