A Compact Model for Reliability Simulation of Deep-Submicron MOS Devices and Circuits

Abstract

Continuing down scaling in CMOS technology has resulted in an increasing and urgent need for a Spice-like reliability model that is capable of predicting the long-term degradation of MOS devices and ICs. In this paper, we develop such a model based on the industry standard BSIM3 model and empirical degradation expressions for the threshold voltage and mobility of MOSFETs. The model is implemented in Cadence Spectre via Verilog-A, and measured data obtained from devices fabricated from the 0.18-μm CMOS technology have been included in support of the model development.