Interface properties of N/sub 2/O-annealed SiO/sub 2//SiC system

Abstract

The electrical properties of dry-oxidized, N/sub 2/O-annealed n-type 6H-SiC metal-oxide-semiconductor (MOS) capacitors are investigated at room temperature. As compared to conventional dry-oxidized device, although the N/sub 2/O-annealed device has higher oxide-charge density, it shows smaller increase in interface-state density under high-field stress. On the other hand, the stress measurements indicate that dry-oxidized device has fewer pre-existing acceptor-type interface states and oxide traps. In summary, N/sub 2/O nitridation improves the hardness of SiO/sub 2//n-type SiC interface and the oxide quality under high-field stress.