Development of Laser-Assisted Bonding with Compression (LABC) Process for 3D IC Integration

Kwang-Seong Choi, Y. Eom, Seok-Hwan Moon, Jiho Joo, Kwangjoo Lee, Jung Hak Kim, Ju Hyeon Kim
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引用次数: 1

Abstract

Laser-Assisted Bonding with Compression (LABC) technology with NCF was proposed to accomplish the productivity and process reliability at the same time. A quartz block as a header was used to deliver a pressure to the devices because of its extremely low absorption of the laser during the bonding process. Newly developed NCF for LABC was designed to have stability on a hot stage and to show solder wetting and fast curing with no void and optimal fillet during the LABC bonding process. As the laser is used as a heat source, the uniform heat should be provided on each interconnection without any damages on chip or a substrate. 780μ-thick daisy chain top and bottom chips with the minimum pitch of 30^m and bump number of about 27,000 were successfully bonded using the LABC and NCF film.
三维集成电路激光辅助键合压缩(LABC)工艺的发展
提出了基于NCF的激光辅助压缩键合(LABC)技术,以同时实现生产效率和工艺可靠性。由于石英块在键合过程中对激光的吸收极低,因此使用石英块作为头来向器件传递压力。新开发的用于LABC的NCF在热阶段具有稳定性,并且在LABC连接过程中表现出焊料湿润和快速固化,无空洞和最佳圆角。由于使用激光作为热源,因此应在每个互连上提供均匀的热量,而不损坏芯片或衬底。利用LABC和NCF薄膜成功地结合了780μ厚的菊花链上下芯片,最小间距为30^m,凹凸数约为27,000。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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