{"title":"Improved diffusion-equation finite difference schema in numerical solution of the nonlinear Poisson equation","authors":"A. Jóźwikowska, K. Jóźwikowski","doi":"10.1109/NUSOD.2016.7547085","DOIUrl":null,"url":null,"abstract":"In this work a numerical iterative method for solving the nonlinear Poisson equation has been developed with the use of the diffusion-equation (parabolic) finite difference schema, to describe semiconductor hetero-structures. Procedures to control the convergence and stability of the method are presented. The approach enables us to solve the nonlinear Poisson equation in a small number of iterations, regardless of the level of hetero-structure complexity, type of electrical contacts and passive dielectric layers. Some numerical results obtained by this method for nBn Hg1-xCdxTe hetero-structure infrared detectors with metal contacts are reported.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2016.7547085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work a numerical iterative method for solving the nonlinear Poisson equation has been developed with the use of the diffusion-equation (parabolic) finite difference schema, to describe semiconductor hetero-structures. Procedures to control the convergence and stability of the method are presented. The approach enables us to solve the nonlinear Poisson equation in a small number of iterations, regardless of the level of hetero-structure complexity, type of electrical contacts and passive dielectric layers. Some numerical results obtained by this method for nBn Hg1-xCdxTe hetero-structure infrared detectors with metal contacts are reported.