A Low-Power CMOS Voltage Reference with Current Loading Capability

Hongchang Qiao, Chenchang Zhan, Jun Yi, Lidan Wang
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引用次数: 1

Abstract

This paper presents a low power subthreshold CMOS voltage reference (CVR) with current loading capability. Based on the classical 2T CVR to achieve low temperature coefficient (TC), a sourcing PMOS is appropriately biased through a local negative feedback loop. Current loading capability is achieved without relying on an output buffer. The proposed CVR is designed in a standard 0.18-μm CMOS process. Simulation results show that the CVR is capable of delivering 300 μA while the generated Vref has less than 0.42% reduction. The minimum supply voltage is 0.5 V and typical power consumption is 3 nW. It achieves an average TC of 9 ppm/°C from -20 °C to 135 °C, line sensitivity of 0.069 %/v and power supply rejection of -65 dB@100Hz.
具有电流负载能力的低功耗CMOS电压基准
提出了一种具有负载电流能力的低功耗亚阈值CMOS基准电压(CVR)。基于经典的2T CVR实现低温系数(TC),源PMOS通过局部负反馈环路适当偏置。当前的负载能力是实现不依赖于输出缓冲器。该CVR采用标准的0.18 μm CMOS工艺设计。仿真结果表明,CVR能够输出300 μA,而产生的Vref降低不超过0.42%。最小供电电压0.5 V,典型功耗3nw。从-20°C到135°C,平均TC为9 ppm/°C,线路灵敏度为0.069% /v,电源抑制为-65 dB@100Hz。
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