Path Delay Tuning for Performance Gain in the Face of Random Manufacturing Variations

Kautalya Mishra, Ahmed Faraz, A. Singh
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引用次数: 4

Abstract

One of the factors now beginning to seriously limit clock rates in large synchronous designs is manufacturing variations in device parameters. Moreover, such random process variations are increasing significantly with device scaling as technology approaches the end of the silicon roadmap. In a large design containing several millions of transistors, virtually every manufactured part will have a few hundreds of transistors that are significant performance outliers. Any one such device in a critical path can greatly limit the highest clock rate that can be achieved by the chip. In this paper we propose and analyze a new design approach that allows for the post manufacture tuning and speed-up of exceptionally slow circuit paths to recover much of the performance lost due to such outlier devices. We show that such tuning of exceptionally slow paths can result in a significant increase in the average clock speed attainable by the manufactured parts. We also show this method to be defect tolerant, implying an additional benefit of increasing the semiconductor yield.
面向随机制造变化的性能增益路径延迟调谐
现在在大型同步设计中开始严重限制时钟速率的因素之一是设备参数的制造变化。此外,随着技术接近硅路线图的终点,这种随机工艺变化随着器件的扩展而显著增加。在包含数百万个晶体管的大型设计中,实际上每个制造的部件都会有几百个晶体管,这些晶体管是显著的性能异常值。在关键路径上的任何一个这样的器件都可以极大地限制芯片所能达到的最高时钟速率。在本文中,我们提出并分析了一种新的设计方法,该方法允许对异常慢的电路路径进行后期调谐和加速,以恢复由于此类异常器件造成的大部分性能损失。我们表明,这种异常缓慢路径的调谐可以导致制造部件可达到的平均时钟速度的显着增加。我们还证明了这种方法具有缺陷容忍度,这意味着增加半导体产量的额外好处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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