Photoexcited Cyclotron Resonance in Semiconductors at Far-Infrared

1981 International Conference on Submillimeter Waves and Their Applications Pub Date : 1981-12-01 DOI:10.1109/ICSWA.1981.9335080

T. Ohyama

引用次数: 0

Abstract

The far-infrared (84-220 μm) laser cyclotron resonance, impurity-Zeeman absorption and exciton-Zeeman absorption under the intrinsic photoexcitation are described for Ge, Si, InSb and GaAs. Through time-resolved experiments, the optically hot electron state and carrier relaxation as well as recombination mechanism are investigated.

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半导体远红外光激回旋共振

描述了Ge、Si、InSb和GaAs在本征光激发下的远红外(84 ~ 220 μm)激光回旋共振、杂质-塞曼吸收和激子-塞曼吸收。通过时间分辨实验，研究了光热电子态、载流子弛豫和复合机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1981 International Conference on Submillimeter Waves and Their Applications

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