A Capped Trimming Hard-Mask Patterning Technique for Integration of Nano-Devices and Conventional Integrated Circuits

Abstract

Capped trimming hard-mask (CTHM) patterning technique has been developed based on standard materials and processing equipments. By using the CTHM technique, sub-50nm feature sized pattern can be realized based on 0.5μm lithography technology. Imaging layer for capping and hard-mask layer shoul d have different etching selectivity and good contiguity to each other. Good control of trimming etching and hard-mask etching processes enable patterning of features with ultra-small dimension.