A. Oki, D. Streit, D. Umemoto, L. Tran, K. Kobayashi, F. Yamada, P. Grossman, T. Block, M. Lammert, S. Olson, J. Cowles, M. Hoppe, L. Yang, A. Gutierrez-Aitken, R. Kagiwada, S. Nojima, E. Rezek, W. Pratt, J. Neal, P. Seymour, V. Steel
{"title":"Future trends of HBT technology for commercial and defense applications","authors":"A. Oki, D. Streit, D. Umemoto, L. Tran, K. Kobayashi, F. Yamada, P. Grossman, T. Block, M. Lammert, S. Olson, J. Cowles, M. Hoppe, L. Yang, A. Gutierrez-Aitken, R. Kagiwada, S. Nojima, E. Rezek, W. Pratt, J. Neal, P. Seymour, V. Steel","doi":"10.1109/MTTTWA.1997.595125","DOIUrl":null,"url":null,"abstract":"Heterojunction bipolar transistor (HBT) technology has been under development since the early 1980s. In the mid-1990s HBT technology has matured providing components for high volume low cost commercial wireless applications, as well as for high performance defense avionics, ground, and space applications. We discuss the status and future trends of HBT IC technology and production for defense and commercial applications, including advanced technology development, and comparison to MESFET, HEMT, and silicon based bipolar technology. Brief mention is made of power amplifiers and signal synthesizers.","PeriodicalId":264044,"journal":{"name":"1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTTTWA.1997.595125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Heterojunction bipolar transistor (HBT) technology has been under development since the early 1980s. In the mid-1990s HBT technology has matured providing components for high volume low cost commercial wireless applications, as well as for high performance defense avionics, ground, and space applications. We discuss the status and future trends of HBT IC technology and production for defense and commercial applications, including advanced technology development, and comparison to MESFET, HEMT, and silicon based bipolar technology. Brief mention is made of power amplifiers and signal synthesizers.
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