Complex resistivity of polymer light-emitting diodes

R. Bianchi, L. F. Santos, R. Faria
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引用次数: 1

Abstract

Complex resistivity measurements in dark and under vacuum were carried out to study the electrical behavior of luminescent polymer diodes (LEDs) having ITO or gold as hole injector electrodes, aluminium as the cathode, and poly[(2-methoxy-5-hexyloxy)-p-phenylenevinylene] - MH-PPV as the luminescent layer. The results obtained were analysed by a model based on resistor-capacitor circuits, which made possible to distinguish between bulk from interface effects, and the contribution of each phenomenon to the electrical current. It was also shown that bulk properties already exist in a film of 0.4 /spl mu/m thick, and from the theoretical fittings it was obtained the dielectric constant and resistivity of MH-PPV.
聚合物发光二极管的复电阻率
以ITO或金为空穴注入电极,铝为阴极,聚[(2-甲氧基-5-己氧基)-对苯乙烯]- MH-PPV为发光层,在黑暗和真空条件下进行了复电阻率测量,研究了发光聚合物二极管的电学行为。所获得的结果通过基于电阻-电容电路的模型进行了分析,该模型可以区分大块效应和界面效应,以及每种现象对电流的贡献。在厚度为0.4 /spl mu/m的薄膜上,已经存在体积特性,并通过理论拟合得到了MH-PPV的介电常数和电阻率。
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