Ku-band AlGaN/GaN HEMT with over 30W

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) were developed for Ku-band applications. The operating voltage characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 12 mm gate periphery exhibits output power of over 30 W with a power added efficiency (PAE) of 12% under VDS = 30 V, CW operating condition at 14.25 GHz, and a gain compression level of 3 dB.