GaAs-Nanowire-Array/Graphene Schottky Diodes for Photodetection

2017 Asia Communications and Photonics Conference (ACP) Pub Date : 2017-11-10 DOI:10.1364/ACPC.2017.SU4K.1

Yao Wu, Xin Yan, Bang Li, Yanbin Luo, Qichao Lu, Xia Zhang, X. Ren

引用次数: 0

Abstract

A Schottky diode based on GaAs nanowire/graphene heterostructure is fabricated by transferring graphene onto the nanowire array. Under illumination of 532 nm, a responsivity of 1.1 mA/W is achieved at reverse bias of 0.5 V.

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用于光探测的砷化镓纳米线阵列/石墨烯肖特基二极管

通过将石墨烯转移到纳米线阵列上，制备了基于砷化镓纳米线/石墨烯异质结构的肖特基二极管。在532 nm的光照下，在0.5 V的反向偏置下，响应率达到1.1 mA/W。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 Asia Communications and Photonics Conference (ACP)

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