A 90-nm CMOS resistor-free compact trimmable voltage reference for ultra-low power low cost applications

A. Samir, E. Kussener, W. Rahajandraibe, L. Girardeau, Y. Bert, H. Barthélemy
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引用次数: 3

Abstract

A low power voltage reference generator operating with a supply voltage ranging from 1.6V to 3.6V has been implemented in a 90-nm standard CMOS process. The reference is based on MOSFETs that are biased in the weak inversion region to consume nanowatts of power and uses no resistors. The maximum supply current at 3.6V and at 125°C is 173nA. It provides an 771mV voltage reference. A temperature coefficient of 7.5ppm/°C is achieved at best and 39.5ppm/°C on average, in a range from −40 to 125°C, as the combined effect of a suppression of the temperature dependence of mobility and the compensation of the threshold voltage temperature variation. The total block area is 0.03mm2.
90nm CMOS无电阻紧凑型可调基准电压,适用于超低功耗低成本应用
在90纳米标准CMOS工艺中实现了一种低功率参考电压发生器,其工作电压范围为1.6V至3.6V。该参考是基于偏置在弱反转区域的mosfet,以消耗纳瓦功率,并且不使用电阻。在3.6V和125°C时的最大电源电流为173nA。它提供了一个771mV的参考电压。温度系数最高可达7.5ppm/°C,在- 40至125°C的范围内平均可达39.5ppm/°C,这是抑制迁移率的温度依赖性和补偿阈值电压温度变化的综合效应。总块面积为0.03mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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