In-Sn Bumping Design and Fabrication for High Speed Interconnects of Superconducting MCM via Laser Melting/Jetting and Distribution

Gaowei Xu, W. Gai, L. Luo, Jie Ren
{"title":"In-Sn Bumping Design and Fabrication for High Speed Interconnects of Superconducting MCM via Laser Melting/Jetting and Distribution","authors":"Gaowei Xu, W. Gai, L. Luo, Jie Ren","doi":"10.1109/ISEC46533.2019.8990936","DOIUrl":null,"url":null,"abstract":"In this paper, we reported a laser melting/jetting bumping technology for flip-chip interconnection, which will provide a flexible interconnection solution for high-speed superconducting MCM (Multi-chip modules). We adopted In-Sn eutectic alloy (with low-melt-point about 117°C) to fabricate flip-chip bump array of SCE-MCM. The effects of the key process parameters (such as laser energy, nitrogen pressure etc.) on interconnection strength were also discussed.","PeriodicalId":250606,"journal":{"name":"2019 IEEE International Superconductive Electronics Conference (ISEC)","volume":"190 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Superconductive Electronics Conference (ISEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEC46533.2019.8990936","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, we reported a laser melting/jetting bumping technology for flip-chip interconnection, which will provide a flexible interconnection solution for high-speed superconducting MCM (Multi-chip modules). We adopted In-Sn eutectic alloy (with low-melt-point about 117°C) to fabricate flip-chip bump array of SCE-MCM. The effects of the key process parameters (such as laser energy, nitrogen pressure etc.) on interconnection strength were also discussed.
超导MCM高速互连的激光熔化/喷射和分布In-Sn碰撞设计与制造
本文报道了一种用于倒装芯片互连的激光熔化/喷射碰撞技术,该技术将为高速超导MCM(多芯片模块)互连提供一种灵活的解决方案。我们采用In-Sn共晶合金(低熔点约117℃)制作了SCE-MCM倒装碰撞阵列。讨论了激光能量、氮气压力等关键工艺参数对互连强度的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信