{"title":"Analysis of ultracompact silicon electro-optic modulator based on Cu-insulator-Si hybrid plasmonic donut resonator","authors":"Shiyang Zhu, G. Lo, D. Kwong","doi":"10.1109/PGC.2012.6457952","DOIUrl":null,"url":null,"abstract":"We design and analyze an ultracompact silicon electro-optic modulator operating at the 1550-nm wavelengths. The modulator consists of a Cu-insulator-Si hybrid plasmonic donut resonator coupled with a conventional Si channel waveguide. A voltage is applied between the ring-shaped Cu cap and the cylinder Cu contact located at the center-donut to modify the condition of the Cu-insulator-Si capacitor between depletion and accumulation, thus leading to a resonant wavelength shift of the resonator. In a modulator with 1-μm radius and 5-nm HfO2 gate oxide, numerical simulation predicts an intensity extinction ratio of >;6 dB for a voltage swing of ~3 V, a switching energy of ~50 fJ/bit, and a speed-of-response of >;50 GHz.","PeriodicalId":158783,"journal":{"name":"2012 Photonics Global Conference (PGC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Photonics Global Conference (PGC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PGC.2012.6457952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We design and analyze an ultracompact silicon electro-optic modulator operating at the 1550-nm wavelengths. The modulator consists of a Cu-insulator-Si hybrid plasmonic donut resonator coupled with a conventional Si channel waveguide. A voltage is applied between the ring-shaped Cu cap and the cylinder Cu contact located at the center-donut to modify the condition of the Cu-insulator-Si capacitor between depletion and accumulation, thus leading to a resonant wavelength shift of the resonator. In a modulator with 1-μm radius and 5-nm HfO2 gate oxide, numerical simulation predicts an intensity extinction ratio of >;6 dB for a voltage swing of ~3 V, a switching energy of ~50 fJ/bit, and a speed-of-response of >;50 GHz.