{"title":"Study on electrical characteristics for active die embedding substrate","authors":"Hyunho Kim","doi":"10.1109/EPTC.2014.7028286","DOIUrl":null,"url":null,"abstract":"This paper presents study on electrical characteristics of active die embedded substrate that is embedded active devices inside substrate. Active die embedding substrate samples are fabricated using embedding process that consists of lamination process, laser drilling at the electrode Cu pads of active device, electroless Cu plating formation process such as photolithography, electrolytic Cu plating, and etching. Interconnection reliability between external pad of substrate and pad of embedding active devices is evaluated by cross-section and in-circuit test of active die embedding substrate using temperature cycle (T/C) test (-55/+125°C, 1000cycle).","PeriodicalId":115713,"journal":{"name":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2014.7028286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents study on electrical characteristics of active die embedded substrate that is embedded active devices inside substrate. Active die embedding substrate samples are fabricated using embedding process that consists of lamination process, laser drilling at the electrode Cu pads of active device, electroless Cu plating formation process such as photolithography, electrolytic Cu plating, and etching. Interconnection reliability between external pad of substrate and pad of embedding active devices is evaluated by cross-section and in-circuit test of active die embedding substrate using temperature cycle (T/C) test (-55/+125°C, 1000cycle).