Analysis on carrier trapping mechanism in organic diodes by charge modulation spectroscopy and electric field optical second harmonic generation measurement
{"title":"Analysis on carrier trapping mechanism in organic diodes by charge modulation spectroscopy and electric field optical second harmonic generation measurement","authors":"E. Lim, M. Bok, D. Taguchi, M. Iwamoto","doi":"10.1109/ASDAM.2014.6998636","DOIUrl":null,"url":null,"abstract":"We studied electric field distribution changes induced in the active layer of ITO/PI/TIPS-pentacene/Au diodes by carrier injection. Upon application of a step voltage to the diodes, the electric field change across the TIPS-pentacene layer was measured. Significant electric field distribution change was suggested due to the carrier injection, and a simple model that accounts for the I-V characteristics of the diodes was proposed, on the basis of the Maxwell-Wagner model. By using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements, we studied the carrier trapping mechanism in ITO/PI/TIPS-pentacene/Au diodes. Using TR-EFISHG in combination with CMS is a very effective way to study carrier behaviors in diodes, and stress-biasing effect induced in TIPS-pentacene active layer can be well identified, in terms of carrier injection and interfacial carrier accumulation.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998636","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We studied electric field distribution changes induced in the active layer of ITO/PI/TIPS-pentacene/Au diodes by carrier injection. Upon application of a step voltage to the diodes, the electric field change across the TIPS-pentacene layer was measured. Significant electric field distribution change was suggested due to the carrier injection, and a simple model that accounts for the I-V characteristics of the diodes was proposed, on the basis of the Maxwell-Wagner model. By using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements, we studied the carrier trapping mechanism in ITO/PI/TIPS-pentacene/Au diodes. Using TR-EFISHG in combination with CMS is a very effective way to study carrier behaviors in diodes, and stress-biasing effect induced in TIPS-pentacene active layer can be well identified, in terms of carrier injection and interfacial carrier accumulation.