Impact of Bias Voltage on Magnetic Inductance of Carbon Nanotube Interconnects

Abstract

Single-walled carbon nanotube (SWCNT) bundles have the potential to provide an attractive solution for the resistivity and electromigration problems faced by traditional copper interconnects. This paper discusses the impact of bias voltage variation on magnetic inductance of SWCNT bundle. The variation of bias voltage on inductance was ignored so far. The authors utilize existing models for SWCNT bundle for evaluation. There is a significant variation in inductance value within the available range of bias voltage. This study shows that the inductance change with respect to bias voltages is about 1% to 35% at different lengths of SWCNTs.