A 12μW NPN-based temperature sensor with a 18.4pJ K2 FOM in 0.18μm BCD CMOS

Abstract

This paper presents an NPN-based temperature sensor intended for the temperature compensation of the metal shunt resistor of an integrated current sensing system. The sensor was implemented in a 0.18 HV BCD CMOS technology and occupies 0.16mm² After a one-point trim, its inaccuracy is less than ±0.4°C over the industrial temperature range (−40°C to 85°C). It also achieves 14.8niK resolution in a 7ms conversion time while consuming 12μm. This results in a resolution FOM of 18.4pJ·K² the lowest ever reported for an NPN-based sensor.